Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

doi:10.1016/j.sse.2011.04.012

標題:	Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
作者:	Huang, Sheng-Yao Chang, Ting-Chang Chen, Min-Chen Chen, Shih-Ching Lo, Hung-Ping Huang, Hui-Chun Gan, Der-Shin Sze, Simon M. Tsai, Ming-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Samarium oxide (Sm2O3);Resistance switching;Nonvolatile memory
公開日期:	1-Sep-2011
摘要:	This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2011.04.012 http://hdl.handle.net/11536/150372
ISSN:	0038-1101
DOI:	10.1016/j.sse.2011.04.012
期刊:	SOLID-STATE ELECTRONICS
Volume:	63
起始頁:	189
結束頁:	191
Appears in Collections:	Articles