標題: Silicon introduced effect on resistive switching characteristics of WOX thin films
作者: Syu, Yong-En
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Geng-Wei
Chang, Kuan-Chang
Tai, Ya-Hsiang
Tsai, Ming-Jinn
Wang, Ying-Lang
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
光電工程研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
公開日期: 9-Jan-2012
摘要: The switching layer with Si interfusion is investigated to improve the electrical characteristics of WOX resistance random access memory (RRAM). The WOX has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WOX-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676194]
URI: http://dx.doi.org/10.1063/1.3676194
http://hdl.handle.net/11536/150445
ISSN: 0003-6951
DOI: 10.1063/1.3676194
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Appears in Collections:Articles