标题: | ESD Protection Design with Low-Leakage Consideration for Silicon Chips of IoT Applications |
作者: | Ker, Ming-Don Lin, Chun-Yu Wu, Yi-Han Wang, Wen-Tai 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | CMOS;electrostatic discharge (ESD);ESD protection;low-leakage |
公开日期: | 1-一月-2017 |
摘要: | On-chip electrostatic discharge (ESD) protection design with low-leakage consideration for the silicon chips of IoT applications is presented. The proposed ESD protection design uses the fast turn-on silicon-controlled rectifier (SCR) device to implement the power-rail ESD clamp circuit. Experimental results verified in TSMC 28nm CMOS process have shown that the proposed design has advantages of low leakage current (2 similar to 3nA), low trigger voltage (similar to 2V), high ESD robustness (>8kV), and free to latchup issue. |
URI: | http://hdl.handle.net/11536/150781 |
ISSN: | 2379-7711 |
期刊: | 2017 IEEE 7TH ANNUAL INTERNATIONAL CONFERENCE ON CYBER TECHNOLOGY IN AUTOMATION, CONTROL, AND INTELLIGENT SYSTEMS (CYBER) |
起始页: | 1496 |
结束页: | 1499 |
显示于类别: | Conferences Paper |