標題: | Area-Efficient and Low-Leakage Diode String for On-Chip ESD Protection |
作者: | Lin, Chun-Yu Wu, Po-Han Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Diode;diode string;electrostatic discharge (ESD);leakage |
公開日期: | 1-二月-2016 |
摘要: | Diode string was used as the effective on-chip electrostatic discharge (ESD) protection device. To reduce the leakage current and the layout area, an area-efficient and low-leakage diode string is proposed in this paper. The standard steps of P- implantation and silicide blocking in CMOS process are used in this design to realize the proposed diode string with stacked P-/N+ diodes. The test devices of the proposed design have successfully been verified in the silicon chip. With the high ESD robustness, low leakage current, and small layout area, the proposed diode string can be a better solution for on-chip ESD protection applications. |
URI: | http://dx.doi.org/10.1109/TED.2015.2504493 http://hdl.handle.net/11536/129638 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2015.2504493 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 63 |
起始頁: | 531 |
結束頁: | 536 |
顯示於類別: | 期刊論文 |