標題: Area-Efficient and Low-Leakage Diode String for On-Chip ESD Protection
作者: Lin, Chun-Yu
Wu, Po-Han
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Diode;diode string;electrostatic discharge (ESD);leakage
公開日期: 1-二月-2016
摘要: Diode string was used as the effective on-chip electrostatic discharge (ESD) protection device. To reduce the leakage current and the layout area, an area-efficient and low-leakage diode string is proposed in this paper. The standard steps of P- implantation and silicide blocking in CMOS process are used in this design to realize the proposed diode string with stacked P-/N+ diodes. The test devices of the proposed design have successfully been verified in the silicon chip. With the high ESD robustness, low leakage current, and small layout area, the proposed diode string can be a better solution for on-chip ESD protection applications.
URI: http://dx.doi.org/10.1109/TED.2015.2504493
http://hdl.handle.net/11536/129638
ISSN: 0018-9383
DOI: 10.1109/TED.2015.2504493
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
起始頁: 531
結束頁: 536
顯示於類別:期刊論文