Title: | Chimney-shaped and plateau-shaped gate electrode field emission arrays |
Authors: | Tarntair, FG Wang, CC Hong, WK Huang, HK Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Jan-1998 |
Abstract: | A triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography. |
URI: | http://dx.doi.org/10.1557/PROC-509-15 http://hdl.handle.net/11536/150946 |
ISSN: | 0272-9172 |
DOI: | 10.1557/PROC-509-15 |
Journal: | MATERIALS ISSUES IN VACUUM MICROELECTRONICS |
Volume: | 509 |
Begin Page: | 15 |
End Page: | 20 |
Appears in Collections: | Conferences Paper |