標題: | Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft |
作者: | Li, Kai-Shin Wei, Yun-Jie Chen, Yi-Ju Chiu, Wen-Cheng Chen, Hsiu-Chih Lee, Min-Hung Chiu, Yu-Fan Hsueh, Fu-Kuo Wu, Bo-Wei Chen, Pin-Guang Lai, Tung-Yan Chen, Chun-Chi Shieh, Jia-Min Yeh, Wen-Kuan Salahuddin, Sayeef Hu, Chenming 交大名義發表 National Chiao Tung University |
公開日期: | 1-一月-2018 |
摘要: | In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I-D. Lower thermal budget process, CO2 far-infrared laser activation and 400 degrees C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F-t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin. |
URI: | http://hdl.handle.net/11536/151100 |
ISSN: | 2380-9248 |
期刊: | 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
顯示於類別: | 會議論文 |