標題: Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
作者: Li, Kai-Shin
Wei, Yun-Jie
Chen, Yi-Ju
Chiu, Wen-Cheng
Chen, Hsiu-Chih
Lee, Min-Hung
Chiu, Yu-Fan
Hsueh, Fu-Kuo
Wu, Bo-Wei
Chen, Pin-Guang
Lai, Tung-Yan
Chen, Chun-Chi
Shieh, Jia-Min
Yeh, Wen-Kuan
Salahuddin, Sayeef
Hu, Chenming
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2018
摘要: In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I-D. Lower thermal budget process, CO2 far-infrared laser activation and 400 degrees C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F-t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.
URI: http://hdl.handle.net/11536/151100
ISSN: 2380-9248
期刊: 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:Conferences Paper