標題: Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
作者: Yen, Kuo-Hsi
Zan, Hsiao-Wen
Ko, Chueh-Ping
Liu, Pu-Kuan
Chang, Tzu-Yueh
Su, Kuo-Hai
Wei, Chiung-Sheng
Lee, Po-Tsung
Chen, Chien-Hsun
Yeh, Chun-Ming
Hwang, Jennchang
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2005
摘要: We firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
URI: http://hdl.handle.net/11536/151158
期刊: PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005
起始頁: 56
結束頁: 58
Appears in Collections:Conferences Paper