Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

標題:	Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
作者:	Yen, Kuo-Hsi Zan, Hsiao-Wen Ko, Chueh-Ping Liu, Pu-Kuan Chang, Tzu-Yueh Su, Kuo-Hai Wei, Chiung-Sheng Lee, Po-Tsung Chen, Chien-Hsun Yeh, Chun-Ming Hwang, Jennchang 交大名義發表 National Chiao Tung University
公開日期:	1-Jan-2005
摘要:	We firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
URI:	http://hdl.handle.net/11536/151158
期刊:	PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005
起始頁:	56
結束頁:	58
Appears in Collections:	Conferences Paper