| Title: | SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT |
| Authors: | Chun-Yen Chang Shiang-Shiou Yen Shao-Chin Chang Che-Wei Chiang |
| Issue Date: | 16-Mar-2017 |
| Abstract: | A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field. |
| Gov't Doc #: | H01L027/02 H01L029/74 |
| URI: | http://hdl.handle.net/11536/151261 |
| Patent Country: | USA |
| Patent Number: | 20170077080 |
| Appears in Collections: | Patents |
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