標題: | SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT |
作者: | Chun-Yen Chang Shiang-Shiou Yen Shao-Chin Chang Che-Wei Chiang |
公開日期: | 16-Mar-2017 |
摘要: | A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field. |
官方說明文件#: | H01L027/02 H01L029/74 |
URI: | http://hdl.handle.net/11536/151261 |
專利國: | USA |
專利號碼: | 20170077080 |
Appears in Collections: | Patents |
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