One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory Applications

Abstract

Lack of a suitable selection device to suppress sneak current has impeded the development of 4F(2) crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO2/Ni MIM structure with a high current density of 10(5) A/cm(2), and a Ni/TiO2/Ni/HfO2/Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.