标题: Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes
作者: Kou, Jianquan
Shen, Chih-Chiang
Shao, Hua
Che, Jiamang
Hou, Xu
Chu, Chunshuang
Tian, Kangkai
Zhang, Yonghui
Zhang, Zi-Hui
Kuo, Hao-Chung
光电工程学系
光电工程研究所
Department of Photonics
Institute of EO Enginerring
公开日期: 10-六月-2019
摘要: In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes (mu LEDs) is numerically investigated. Our results show that the external quantum efficiency (EQE) and the optical power density drop drastically as the device size decreases when sidewall defects are induced. The observations are owing to the higher surface-to-volume ratio for small mu LEDs, which makes the Shockley-Read-Hall (SRH) non-radiative recombination at the sidewall defects not negligible. The sidewall defects also severely affect the injection capability for electrons and holes, such that the electrons and holes are captured by sidewall defects for the SRH recombination. Thus, the poor carrier injection shall be deemed as a challenge for achieving high-brightness mu LEDs. Our studies also indicate that the sidewall defects form current leakage channels, and this is reflected by the current density-voltage characteristics. However, the improved current spreading effect can be obtained when the chip size decreases. The better current spreading effect takes account for the reduced forward voltage. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OE.27.00A643
http://hdl.handle.net/11536/152289
ISSN: 1094-4087
DOI: 10.1364/OE.27.00A643
期刊: OPTICS EXPRESS
Volume: 27
Issue: 12
起始页: 0
结束页: 0
显示于类别:Articles