標題: Implementation of a 900 V Switching Circuit for High Breakdown Voltage beta-Ga2O3 Schottky Diodes
作者: Chen, Yen-Ting
Yang, Jiancheng
Ren, Fan
Chang, Chin-Wei
Lin, Jenshan
Pearton, S. J.
Tadjer, Marko J.
Kuramata, Akito
Liao, Yu-Te
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 22-May-2019
摘要: This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-mu m thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-mu m thick beta-Ga2O3 substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of -900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design. (C) The Author(s) 2019. Published by ECS.
URI: http://dx.doi.org/10.1149/2.0421907jss
http://hdl.handle.net/11536/152364
ISSN: 2162-8769
DOI: 10.1149/2.0421907jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 8
Issue: 7
起始頁: 0
結束頁: 0
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