標題: | Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics |
作者: | Liao, Chia-Chun Lin, Min-Chen Liu, Shao-Xuan Chao, Tien-Sheng 電子物理學系 Department of Electrophysics |
關鍵字: | Metal-induced lateral crystallization (MILC);strain;thin-film transistors (TFTs) |
公開日期: | 1-Feb-2012 |
摘要: | This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers. |
URI: | http://dx.doi.org/10.1109/LED.2011.2174609 http://hdl.handle.net/11536/15237 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2174609 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 2 |
起始頁: | 239 |
結束頁: | 241 |
Appears in Collections: | Articles |
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