Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

Abstract

We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-mu m oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C due to the reduction of cavity length from 3 lambda/2 to lambda/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 degrees C.