標題: Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
作者: Shen, Chih-Chiang
Hsu, Tsung-Chi
Yeh, Yen-Wei
Kang, Chieh-Yu
Lu, Yun-Ting
Lin, Hon-Way
Tseng, Hsien-Yao
Chen, Yu-Tzu
Chen, Cheng-Yuan
Lin, Chien-Chung
Wu, Chao-Hsin
Lee, Po-Tsung
Sheng, Yang
Chiu, Ching-Hsueh
Kuo, Hao-Chung
交大名義發表
光電系統研究所
光電工程學系
National Chiao Tung University
Institute of Photonic System
Department of Photonics
關鍵字: High-speed VCSEL;PICS3D;50 Gb;s;Oxide aperture;Cavity length
公開日期: 14-八月-2019
摘要: We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-mu m oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C due to the reduction of cavity length from 3 lambda/2 to lambda/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 degrees C.
URI: http://dx.doi.org/10.1186/s11671-019-3107-7
http://hdl.handle.net/11536/152631
ISSN: 1931-7573
DOI: 10.1186/s11671-019-3107-7
期刊: NANOSCALE RESEARCH LETTERS
Volume: 14
Issue: 1
起始頁: 0
結束頁: 0
顯示於類別:期刊論文