標題: Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion-Part II: Compact Modeling
作者: Wang, Wei
Laudato, Mario
Ambrosi, Elia
Bricalli, Alessandro
Covi, Erika
Lin, Yu-Hsuan
Ielmini, Daniele
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Analytical model;neuromorphic computing;retention time;selective device;volatile switching
公開日期: 1-Sep-2019
摘要: Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a promising selector device for high-density crosspoint arrays. These devices display high ON-OFF ratio, volatile switching, high switching speed, and long endurance, supporting the adoption in large memory arrays. However, the mechanism of volatile switching is not clear yet, which prevents the development of compact models for circuit design and simulation. Based on an extensive study of the switching mechanism, we report an analytical model that captures all electrical characteristics of the device, including switching, recovery, and their dependence on the applied voltage. We use the analytical model to simulate the circuit-level behavior of the device as long/short term memory synapse.
URI: http://dx.doi.org/10.1109/TED.2019.2928888
http://hdl.handle.net/11536/152824
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2928888
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 9
起始頁: 3802
結束頁: 3808
Appears in Collections:Articles