標題: Highly durable and flexible gallium-based oxide conductive-bridging random access memory
作者: Gan, Kai-Jhih
Liu, Po-Tsun
Chien, Ta-Chun
Ruan, Dun-Bao
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
光電工程研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
公開日期: 2-Oct-2019
摘要: The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10(5)), low operation voltage, high endurance (>1.4 x 10(2) cycles), and large retention memory window (>10(5)). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.
URI: http://dx.doi.org/10.1038/s41598-019-50816-7
http://hdl.handle.net/11536/153094
ISSN: 2045-2322
DOI: 10.1038/s41598-019-50816-7
期刊: SCIENTIFIC REPORTS
Volume: 9
起始頁: 0
結束頁: 0
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