標題: Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy
作者: Tsai, Yi-Hsun
Wu, Yu-Hsun
Ting, Yen-Yu
Wu, Chu-Chun
Wu, Jenq-Shinn
Lin, Sheng-Di
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2019
摘要: We demonstrate nano-to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI: http://dx.doi.org/10.1063/1.5116044
http://hdl.handle.net/11536/153345
DOI: 10.1063/1.5116044
期刊: AIP ADVANCES
Volume: 9
Issue: 10
起始頁: 0
結束頁: 0
顯示於類別:期刊論文