標題: Influences of Contact Metals on the Performances of MoS2 Devices under Strains
作者: Tseng, Sian-Hong
Chen, Hung-Yi
Hsu, Wei-Ting
Wang, Hsiang-Chen
Li, Yuan-Yao
Chang, Wen-Hao
Lu, Ming-Pei
Lu, Ming-Yen
電子物理學系
Department of Electrophysics
公開日期: 19-Dec-2019
摘要: The growth of large-area MoS2 films was achieved through atmospheric pressure chemical vapor deposition via vapor management in this study. The thickness of the MoS2 film changed upon varying the amount of vapor deposited on the substrate. Gratifyingly, large-area monolayer MoS2 was obtained under controlled conditions. Studies using transmission electron microscopy and second harmonic generation confirmed that the MoS2 films were composed of grains having sizes ranging from 40 to 70 mu m. Flexible MoS2 device arrays were fabricated on a polyimide substrate; the device arrays displayed high spatial uniformity in their carrier transport properties. The contact metals affected the electrical characteristics of the MoS2 devices under strain; the sensitivity of devices featuring Schottky contacts was higher than that of those with ohmic contacts. Importantly, the device arrays exhibit sensitive and endurance performances under strain cycles of up to 10(5) times. These results suggest a means for the feasible growth of large-area single-layer MoS2 films, as well as the exploitation of flexible MoS2 device arrays in strain and human motion sensor applications.
URI: http://dx.doi.org/10.1021/acs.jpcc.9b09028
http://hdl.handle.net/11536/153628
ISSN: 1932-7447
DOI: 10.1021/acs.jpcc.9b09028
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 123
Issue: 50
起始頁: 30696
結束頁: 30703
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