標題: Highly (111)-oriented Nanotwinned Cu for High Fatigue Resistance in fan-out wafer-level packaging
作者: Li, Yu-Jin
Theng, Chih-Han
Tseng, I-Hsin
Chen, Chih
Lin, Benson
Chang, Chia-Cheng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nano-twinned;Cu;fan-out;TCT
公開日期: 1-Jan-2019
摘要: Fanout wafer level packaging is a potential solution for combining high electrical performance and low cost. However, with the shrinkage of the package, the mechanical reliability of the copper redistribution layer becomes an important issue. However, based on the processing of fan out packaging, the copper lines were annealed several times during the process. The annealing process is harmful to traditional strengthen mechanisms, but not to columnar grains with high density twinning structure. In this study, the technology of electroplating highly <111>-oriented copper lines was introduced to solve the reliability issue in copper RDLs. By the nature of nano-twinned Cu, the performance of thermal cycling test (TCT) lifetime is much better than normal copper, and the failure mechanisms were discussed in this study.
URI: http://dx.doi.org/10.1109/ECTC.2019.00120
http://hdl.handle.net/11536/153659
ISBN: 978-1-7281-1498-9
ISSN: 0569-5503
DOI: 10.1109/ECTC.2019.00120
期刊: 2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
起始頁: 758
結束頁: 762
Appears in Collections:Conferences Paper