標題: Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs
作者: Lu, Po-Sheng
Lin, Chia-Chen
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-2019
摘要: In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL.
URI: http://hdl.handle.net/11536/153663
ISBN: 978-1-7281-0942-8
ISSN: 1930-8868
期刊: 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
起始頁: 0
結束頁: 0
顯示於類別:會議論文