標題: | Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs |
作者: | Lu, Po-Sheng Lin, Chia-Chen Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-2019 |
摘要: | In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL. |
URI: | http://hdl.handle.net/11536/153663 |
ISBN: | 978-1-7281-0942-8 |
ISSN: | 1930-8868 |
期刊: | 2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |