Title: Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application
Authors: Hung, Chia-Lung
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Silicon carbide;Metal-oxide-semiconductor field effect transistor;Gate oxide;Isolation
Issue Date: 1-Apr-2020
Abstract: SiC devices are suitable for high temperature applications due to its' wide energy bandgap and high thermal conductivity. Some SiC CMOSFET ICs have been reported recently. However, less literature address the characteristics of SiC PMOSFET. In this work, we fabricated PMOSFET with Local Oxidation of SiC (LOCOSiC) isolation structure and different gate oxidation processes targeting sub-10V operation. Well behaved PMOSFET with suitable threshold voltage ( - 5.58 V), low subthreshold swing (200 mV/decade), acceptable hole mobility (3 cm(2)/V-sec), and low off-state current ( < 1 x 10(-12) A/mu m at -10 V) is achieved. Temperature dependence of device characteristics are investigated. These results make the implementation of high-performance CMOS a great progress.
URI: http://dx.doi.org/10.1016/j.sse.2020.107774
http://hdl.handle.net/11536/154128
ISSN: 0038-1101
DOI: 10.1016/j.sse.2020.107774
Journal: SOLID-STATE ELECTRONICS
Volume: 166
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Appears in Collections:期刊論文