標題: High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing
作者: Liu, Chien
Chen, Hsuan-Han
Tung, Yi-Chun
Wang, Wei-Chun
Huang, Zhong-Ying
Shih, Bing-Yang
Hsiung, Szu-Yen
Wang, Shih-An
Fan, Yu-Chi
Lee, Tsung-Ming
Lin, Chien-Liang
Huang, Zi-You
Liu, Hsiu-Ming
Lee, Sheng
Chou, Wu-Ching
Cheng, Chun-Hu
Hsu, Hsiao-Hsuan
光電系統研究所
電子物理學系
電子工程學系及電子研究所
Institute of Photonic System
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2020
摘要: In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1347-4065/ab6420
http://hdl.handle.net/11536/154172
ISSN: 0021-4922
DOI: 10.7567/1347-4065/ab6420
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 59
起始頁: 0
結束頁: 0
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