標題: Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering
作者: Hsu, Wei-Fan
Lu, Li-Syuan
Kuo, Po-Chun
Chen, Jie-He
Chueh, Wei-Chen
Yeh, Han
Kao, Hui-Ling
Chen, Jyh-Shin
Chang, Wen-Hao
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: single-crystalline AlN film;highly oriented MoS2 monolayer;low-temperature sputtering;van der Waals epitaxy;Transition metal dichalcogenide
公開日期: 1-Apr-2019
摘要: Growing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 degrees C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336 degrees, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates.
URI: http://dx.doi.org/10.1021/acsanm.8b02358
http://hdl.handle.net/11536/154330
ISSN: 2574-0970
DOI: 10.1021/acsanm.8b02358
期刊: ACS APPLIED NANO MATERIALS
Volume: 2
Issue: 4
起始頁: 1964
結束頁: 1969
Appears in Collections:Articles