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dc.contributor.authorRuan, Dun-Baoen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorGan, Kai-Jhihen_US
dc.contributor.authorChiu, Yu-Chuanen_US
dc.contributor.authorHsu, Chih-Chiehen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2020-07-01T05:21:16Z-
dc.date.available2020-07-01T05:21:16Z-
dc.date.issued2020-05-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5142557en_US
dc.identifier.urihttp://hdl.handle.net/11536/154349-
dc.description.abstractThe effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation damage ambient, different concentrations of tungsten dopant have been introduced for the TFT device fabrication. It is interesting that the high energy ionizing radiation may significantly increase the conductivity and influence the total concentration of oxygen vacancy in the transparent amorphous oxide semiconductor material, which may be completely different from the traditional radiation damage effect for silicon based CMOS devices. However, that abnormal phenomenon will be effectively suppressed by the powerful carrier suppressor, tungsten, which may have a high oxygen bond dissociation energy. Therefore, IWO devices with a 4% tungsten oxide dopant might be the optimized result even after high dosage ionizing radiation exposure. Hence, it may provide a promising radiation hardness approach to improve both the electrical characteristics and reliability for next generation displays, which can be used in the control system of nuclear power generation or space technology.en_US
dc.language.isoen_USen_US
dc.titleRole of tungsten dopants in indium oxide thin-film transistor on radiation hardness technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5142557en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume116en_US
dc.citation.issue18en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000532284800004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles