標題: Adhesion Property of Polyimide and Passivation Layer for Polymer/metal Wafer-level Hybrid Bonding in 3D Integration
作者: Lu, Cheng-Hsien
Kho, Yi-Tung
Yang, Yu-Tao
Chen, Yu-Pei
Chen, Chiao-Pei
Hung, Tsung-Tai
Chen, Chiu-Feng
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: adhesion;four-point bending;polyimide;polyimide-like;hybrid bonding;3D integration
公開日期: 1-Jan-2018
摘要: In this paper, the four-point bending method experiments were carried out with different polyimides and passivation layers for realization of adhesion property below 400 degrees C. Three types of passivation layers, thermal oxide, tetraethoxysilane (TEOS) oxide, silicon nitride, and three types of polyimides, with hydrophobic silane, with hydrophilic silane and without silane, and annealing temperature were all considered in this paper. Moreover, the relation between adhesion strength and surface roughness is discussed. Finally, a low thermal budget (250-375 degrees C) polyimide/metal hybrid bonding scheme with good stress release was proposed for future hybrid bonding applications.
URI: http://dx.doi.org/10.1109/ECTC.2018.00067
http://hdl.handle.net/11536/154483
ISBN: 978-1-5386-4998-5
ISSN: 0569-5503
DOI: 10.1109/ECTC.2018.00067
期刊: 2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018)
起始頁: 401
結束頁: 406
Appears in Collections:Conferences Paper