PROCESS DEVELOPMENT OF LOW RESISTIVE Ag-BASED THROUGH SILICON VIAS USING INKJET PRINTING TECHNIQUE FOR 3D MICROSYSTEM INTEGRATION

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Jia-Han	en_US
dc.contributor.author	Tsou, Kun-Lin	en_US
dc.contributor.author	Fu, Yu-Min	en_US
dc.contributor.author	Cheng, Yu-Ting	en_US
dc.contributor.author	Song, Yen-Fang	en_US
dc.date.accessioned	2020-10-05T02:00:30Z	-
dc.date.available	2020-10-05T02:00:30Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-1610-5	en_US
dc.identifier.issn	1084-6999	en_US
dc.identifier.uri	http://hdl.handle.net/11536/155020	-
dc.description.abstract	This paper presents an inkjet printing and filling process to produce 250 mu m deep Ag-based fully filled through silicon vias with the aspect ratio of via depth vs. diameter up to 5. With the optimization of the printing pattern, humidity control, and silver mirror reaction, the Ag TSV subjected to 400 degrees C thermal anneal for 60 mins can exhibit a resistivity of 26 mu Omega.cm, the lowest resistivity and highest AR ever reported. Process simplicity and no need of metal liners make the technique with great potential for 3D microsystem integration.	en_US
dc.language.iso	en_US	en_US
dc.title	PROCESS DEVELOPMENT OF LOW RESISTIVE Ag-BASED THROUGH SILICON VIAS USING INKJET PRINTING TECHNIQUE FOR 3D MICROSYSTEM INTEGRATION	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)	en_US
dc.citation.spage	376	en_US
dc.citation.epage	379	en_US
dc.contributor.department	加速器光源科技與應用學位學程	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Master and Ph.D. Program for Science and Technology of Accelrrator Light Source	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000541142100104	en_US
dc.citation.woscount	0	en_US
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