標題: Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays
作者: Chen, Jui-Yuan
Wu, Min-Ci
Ting, Yi-Hsin
Lee, Wei-Che
Yeh, Ping-Hung
Wu, Wen-Wei
交大名義發表
材料科學與工程學系
National Chiao Tung University
Department of Materials Science and Engineering
關鍵字: Nanowires;RRAM;Diode;ZnO;Homojunction
公開日期: 1-Oct-2020
摘要: Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta2O5/Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.scriptamat.2020.06.061
http://hdl.handle.net/11536/155153
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2020.06.061
期刊: SCRIPTA MATERIALIA
Volume: 187
起始頁: 439
結束頁: 444
Appears in Collections:Articles