標題: Transient Thermal Damage Simulation for Novel Location-Controlled Grain Technique in Monolithic 3D IC
作者: Chen, Pin-Jun
Shen, Chih-Ming
Yang, Chih-Chao
Tai, Ming-Chi
Lo, Wei-Chung
Shen, Chang-Hong
Hu, Chenming
Chen, Kuan-Neng
國際半導體學院
International College of Semiconductor Technology
公開日期: 1-Jan-2019
摘要: In this research, Finite Element Method (FEM) is used to simulate transient thermal conduction in the monolithic three-dimensional integrated circuit (3DIC) with a novel location-controlled-grain (LCG) technique. Through this method, the impact of laser flux, amorphous Si thickness and interlayer dielectric (ILD) thickness on that model can be investigated. Furthermore, with the assistance of thermal damage simulation, we can utilize the optimal process parameters in this state-of-the-art technique to accelerate the development of advanced semiconductor technologies.
URI: http://hdl.handle.net/11536/155282
ISBN: 978-1-7281-6070-2
ISSN: 2150-5934
期刊: 2019 14TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT 2019)
起始頁: 104
結束頁: 107
Appears in Collections:Conferences Paper