标题: Annealing effects on resistive switching of IGZO-based CBRAM devices
作者: Gan, Kai-Jhih
Liu, Po-Tsun
Ruan, Dun-Bao
Chiu, Yu-Chuan
Sze, Simon M.
电子工程学系及电子研究所
光电工程学系
光电工程研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
关键字: Resistive switching;Indium-gallium-zinc oxide (IGZO);Conductive-bridge random access memory (CBRAM);Annealing treatment
公开日期: 1-十月-2020
摘要: In this study, the impact of post-oxide deposition annealing on performance of IGZO-based conductive-bridging random access memory (CBRAM) is reported. It is found that besides the distinct reduction in resistive switching parameters of SET/RESET voltages, their dispersions, and the resistance ratio of high-resistance state to low-resistance state can be improved after N-2 annealing. The annealing effects on enhancing of the resistive switching properties are investigated by x-ray photoelectron spectra. It can be considered that the formation of the filament is better controlled by the increase of oxygen vacancies in the switching layer, which is the main reason for the improvement of resistive switching characteristics.
URI: http://dx.doi.org/10.1016/j.vacuum.2020.109630
http://hdl.handle.net/11536/155349
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2020.109630
期刊: VACUUM
Volume: 180
起始页: 0
结束页: 0
显示于类别:Articles