Well-behaved Ge n(+)/p shallow junction achieved by plasma immersion ion implantation

Abstract

Ge n(+)/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n(+)/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 degrees C annealing, well-behaved Ge n(+)/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 degrees C annealing, best Ge n(+)/p junction performance with current on/off ratio-9 x 10(5) and ideality factor-1.07 is achieved by PIII.