標題: Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
作者: Wang, Sheng-Chun
Su, Pin
Chen, Kun-Ming
Chen, Bo-Yuan
Huang, Guo-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High frequency;MOSFET;noise;temperature dependence;van der Ziel's model
公開日期: 1-Mar-2012
摘要: The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S-id) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g(d0) as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g(m) significantly decreases as temperature increases, their minimum noise figure NFmin and equivalent noise resistance R-n would degrade with increasing temperature.
URI: http://dx.doi.org/10.1109/TED.2011.2177664
http://hdl.handle.net/11536/15605
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2177664
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Issue: 3
起始頁: 551
結束頁: 556
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