Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory

doi:10.1109/TNANO.2011.2179062

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Yu-Hsien	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.date.accessioned	2014-12-08T15:22:22Z	-
dc.date.available	2014-12-08T15:22:22Z	-
dc.date.issued	2012-03-01	en_US
dc.identifier.issn	1536-125X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TNANO.2011.2179062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15835	-
dc.description.abstract	In this paper, we demonstrate 50-nm trigate nonvolatile HfO2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.	en_US
dc.language.iso	en_US	en_US
dc.subject	Flash memory	en_US
dc.subject	hafnium oxide	en_US
dc.subject	nanocrystals	en_US
dc.subject	nonvolatile memories	en_US
dc.title	Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TNANO.2011.2179062	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON NANOTECHNOLOGY	en_US
dc.citation.volume	11	en_US
dc.citation.issue	2	en_US
dc.citation.spage	412	en_US
dc.citation.epage	417	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000301420900028	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

文件中的檔案：

000301420900028.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。