標題: Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin Films
作者: Chou, Hsiu-Yu
Lee, En-Ko
Lin, Meng-Han
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2009
摘要: Low temperature processing of SBT thin films with SrTiO(3) (STO) seeded layer deposited onto Ir/SiO(2)/Si (MIM structure) and CeO(2)/Si (MFIS structure) substrate using MOD method was investigated. The Sr(0.8)Bi(2.6)Ta(2)O(9+x) (SBT) thin films with a STO seeded layer on MIM structure showed prefer (115) orientation, well crystalline and lower crystal temperature than those without STO seeded layer. The SBT thin films with STO seeded layer on MFIS structure also showed prefer (115), (006) orientation and well crystalline SBT phase annealed at 700 degrees C. The seeded layer, STO, effectively protected the evaporation of Bi through the Pt top electrode and diffusion of Bi into the Ir bottom electrode on MIM structure. It also can improve the crystallization of SBT phase, grain growth and lower crystallized temperature of SBT thin film. The memory window and leakage current densities of SBT thin films with STO seeded layers are improved significantly in comparison with those films without the STO seeded layer. In the MIM structure, the SBT thin film with STO seeded layer can decrease the leakage current density to 10-9 A/cm(2) at 100 kV/cm. In the MFIS structure, the SBT thin film with STO seeded layer also can improve the memory window and lead to lower leakage current at low voltage.
URI: http://dx.doi.org/10.1080/00150190902869913
http://hdl.handle.net/11536/15928
ISSN: 0015-0193
DOI: 10.1080/00150190902869913
期刊: FERROELECTRICS
Volume: 382
Issue: 
起始頁: 92
結束頁: 99
Appears in Collections:Conferences Paper