標題: SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS
作者: GANIKHANOV, F
LIN, GR
CHEN, WC
CHANG, CS
PAN, CL
光電工程學系
Department of Photonics
公開日期: 4-Dec-1995
摘要: We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115248
http://hdl.handle.net/11536/1604
ISSN: 0003-6951
DOI: 10.1063/1.115248
期刊: APPLIED PHYSICS LETTERS
Volume: 67
Issue: 23
起始頁: 3465
結束頁: 3467
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