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dc.contributor.authorHOU, CSen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:03:01Z-
dc.date.available2014-12-08T15:03:01Z-
dc.date.issued1995-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.477774en_US
dc.identifier.urihttp://hdl.handle.net/11536/1610-
dc.description.abstractA two zone Green's function solution method is proposed to analytically model the potential distribution in the silicon film of fully depleted SOI MESFET's, in which the exact solution of 2-D Poisson's equation is obtained by using the appropriate boundary conditions, From the derived analytic 2-D potential distribution, the bottom potential in the active silicon film is used to analyze the drain-induced barrier lowering effect and the threshold voltage is defined in terms of minimum channel potential barrier, The results of the developed analytic threshold-voltage model are compared with those of 2-D numerical simulation, and good agreements are obtained for the gate length down to 0.1 mu m with wide ranges of structure parameters and bias conditions.en_US
dc.language.isoen_USen_US
dc.titleA 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.477774en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume42en_US
dc.citation.issue12en_US
dc.citation.spage2156en_US
dc.citation.epage2162en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TH17200018-
dc.citation.woscount16-
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