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dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorMou, Zong-Wenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChiu, Chia-Sungen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorLiu, Wen-Deen_US
dc.contributor.authorChen, Ming-Yien_US
dc.contributor.authorYang, Yu-Chien_US
dc.contributor.authorWang, Kai-Lien_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:22:53Z-
dc.date.available2014-12-08T15:22:53Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/02BC12en_US
dc.identifier.urihttp://hdl.handle.net/11536/16140-
dc.description.abstractThe hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal-oxide-semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S-parameter variations under hot-carrier stress were also examined in this study. The observations of S-parameter variations are important for RF power amplifier design. (C) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleInvestigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi02BC12en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000303481400019-
dc.citation.woscount0-
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