標題: | A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels |
作者: | Kuo, Chia-Hao Lin, Horng-Chih Lee, I-Che Cheng, Huang-Chung Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | CMOS inverter;poly-Si;system-on-panel (SoP);thin-film transistor (TFT) |
公開日期: | 1-六月-2012 |
摘要: | A novel complementary metal-oxide-semiconductor inverter with poly-Si nanowire channels is proposed and demonstrated in this letter. The scheme employs a clever tilted-angle implant process in the fabrication; therefore, the formation of the source and drain of both p-channel and n-channel devices requires only one lithographic step. The fabricated n-channel and p-channel field-effect transistors in the inverters show a high ON/OFF current ratio, an acceptable subthreshold swing, and a symmetric driving current, thus enabling the realization of excellent characteristics of the inverters. |
URI: | http://hdl.handle.net/11536/16497 |
ISSN: | 0741-3106 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 6 |
結束頁: | 833 |
顯示於類別: | 期刊論文 |