標題: Improvement on ESD Robustness of Lateral DMOS in High-Voltage CMOS ICs by Body Current Injection
作者: Chen, Wen-Yi
Ker, Ming-Dou
Jou, Yeh-Ning
Huang, Yeh-Jen
Lin, Geeng-Lih
電機學院
College of Electrical and Computer Engineering
公開日期: 2009
摘要: With the waffle layout style, body-injected technique implemented by body current injection on n-channel lateral DMOS (nLDMOS) has been successfully verified in a 0.5-mu m 16-V BCD process. The TIP measured results confirmed that the secondary breakdown current (I(t2)) of waffle nLDMOS can be significantly increased by the body current injection with the corresponding trigger circuit design. The latchup immunity of power-rail ESD protection circuit can be further improved by the stacked configuration with multiple nLDMOS devices in HV ICs.
URI: http://hdl.handle.net/11536/16511
ISBN: 978-1-4244-3827-3
期刊: ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5
起始頁: 385
結束頁: 388
Appears in Collections:Conferences Paper