Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain

Abstract

In this study, we explore the operation of operation a novel asymmetric Schottky-barrier transistor (ASSBT) through using technology computer aided design (TCAD). The new ASSBT features a silicided Schottky-barrier (SB) source, with the channel and drain made of heavily n-doped silicon. By eliminating the SB drain junction contained in conventional symmetrical-type SB metal-oxide-semiconductor field-effect transistors (MOSFETs), a larger on-state current is achievable. Moreover, combined with the adoption of fully depleted thin-film channel, the off-state leakage current can be efficiently suppressed as well. In addition, we also comprehensively analyze the transport mechanisms dominating in different operational regions of this new ASSBT. A pseudo-subthreshold region that shows worse subthreshold swing (SS) than the subthreshold region is identified. A decrease in channel and/or gate oxide thicknesses can contribute to the improvement of the SS of this region. A modified form of scaling length (lambda) is also introduced to describe the impacts of structural parameters and gate configurations on the SS characteristics of this new ASSBT. (c) 2012 The Japan Society of Applied Physics