Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

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DC 欄位	值	語言
dc.contributor.author	Tsai, Bo-An	en_US
dc.contributor.author	Lai, Chiung-Hui	en_US
dc.contributor.author	Lee, Bo-Shiun	en_US
dc.contributor.author	Luo, Chih-Wei	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.date.accessioned	2014-12-08T15:24:06Z	-
dc.date.available	2014-12-08T15:24:06Z	-
dc.date.issued	2012	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16773	-
dc.description.abstract	"In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. Moreover, analysis of X-ray diffraction intensity can be used to explain the workfunction shift of the TiN materials. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013206esl] All rights reserved."	en_US
dc.language.iso	en_US	en_US
dc.title	Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	6	en_US
dc.citation.epage	H185	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000306716000011	-
dc.citation.woscount	0	-
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