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dc.contributor.authorTsai, Bo-Anen_US
dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorLee, Bo-Shiunen_US
dc.contributor.authorLuo, Chih-Weien_US
dc.contributor.authorLee, Yao-Jenen_US
dc.date.accessioned2014-12-08T15:24:06Z-
dc.date.available2014-12-08T15:24:06Z-
dc.date.issued2012en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/16773-
dc.description.abstract"In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. Moreover, analysis of X-ray diffraction intensity can be used to explain the workfunction shift of the TiN materials. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013206esl] All rights reserved."en_US
dc.language.isoen_USen_US
dc.titleLow-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Materialen_US
dc.typeArticleen_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume15en_US
dc.citation.issue6en_US
dc.citation.epageH185en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000306716000011-
dc.citation.woscount0-
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