Nanoindentation of GaSe thin films

doi:10.1186/1556-276X-7-403

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DC 欄位	值	語言
dc.contributor.author	Jian, Sheng-Rui	en_US
dc.contributor.author	Ku, Shin-An	en_US
dc.contributor.author	Luo, Chih-Wei	en_US
dc.contributor.author	Juang, Jenh-Yih	en_US
dc.date.accessioned	2014-12-08T15:24:25Z	-
dc.date.available	2014-12-08T15:24:25Z	-
dc.date.issued	2012-07-17	en_US
dc.identifier.issn	1931-7573	en_US
dc.identifier.uri	http://dx.doi.org/10.1186/1556-276X-7-403	en_US
dc.identifier.uri	http://hdl.handle.net/11536/16934	-
dc.description.abstract	The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple 'pop-in' events) in the loading segments of the load-displacement curves, and the continuous stiffness measurements indicate that the hardness and Young's modulus of the hexagonal GaSe films are 1.8 +/- 0.2 and 65.8 +/- 5.6 GPa, respectively.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaSe thin films	en_US
dc.subject	XRD	en_US
dc.subject	Nanoindentation	en_US
dc.subject	Hardness	en_US
dc.title	Nanoindentation of GaSe thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1186/1556-276X-7-403	en_US
dc.identifier.journal	NANOSCALE RESEARCH LETTERS	en_US
dc.citation.volume	7	en_US
dc.citation.issue		en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000308430700001	-
dc.citation.woscount	4	-
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