A low-voltage CMOS LNA design utilizing the technique of capacitive feedback matching network

doi:10.1109/ICECS.2006.379705

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DC Field	Value	Language
dc.contributor.author	Wu, Chung-Yu	en_US
dc.contributor.author	Shahroury, Fadi Riad	en_US
dc.date.accessioned	2014-12-08T15:25:03Z	-
dc.date.available	2014-12-08T15:25:03Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-1-4244-0394-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17418	-
dc.identifier.uri	http://dx.doi.org/10.1109/ICECS.2006.379705	en_US
dc.description.abstract	In this paper, a CMOS low noise amplifier (LNA) with a new input matching topology has been proposed, analyzed, and measured. The input matching network is designed through the technique of capacitive feedback matching network. The proposed LNA which is implemented in a 0.18-mu m 1P6M CMOS technology is operated at the frequency of 12.8 GHz. It has a gain S21 of 13.2 dB, a noise figure (NF) of 4.57 dB and an NFmin of 4.46 dB. The reverse isolation S12 of the LNA can achieve -40 dB and the input and output return losses are better than -11 dB. The input 1-dB compression point is -11 dBm. This LNA drains 10 mA from the supply voltage of 1 V.	en_US
dc.language.iso	en_US	en_US
dc.title	A low-voltage CMOS LNA design utilizing the technique of capacitive feedback matching network	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ICECS.2006.379705	en_US
dc.identifier.journal	2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3	en_US
dc.citation.spage	78	en_US
dc.citation.epage	81	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000252489600020	-
Appears in Collections:	Conferences Paper

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