Nano-roughening for reliable N/MEMS manufacture

doi:10.1109/NEMS.2006.334659

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Chia-Yeh	en_US
dc.contributor.author	Cheng, Y. T.	en_US
dc.contributor.author	Hsu, W. S.	en_US
dc.date.accessioned	2014-12-08T15:25:03Z	-
dc.date.available	2014-12-08T15:25:03Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-1-4244-0139-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17425	-
dc.identifier.uri	http://dx.doi.org/10.1109/NEMS.2006.334659	en_US
dc.description.abstract	This paper presents a nano-roughneneing technique to effectively modify bonding surface for ensuring for the continuation of hermetic encapsulation shrinkage from MEMS to NEMS. The roughening is realized via a non-uniform etch characteristic of PR which is etched then utilized as an etching mask for the following silicon etching process. UV adhesive bonding is utilized for the verification of the nano-roughening for NEMS hermetic encapsulation. The average roughnesses of silicon substarte before and after the modification are 0.4nm and 12.4nm respectively. The roughness increase can effectively provide more than 30% bonding strength enhancement and 8% leakage reduction.	en_US
dc.language.iso	en_US	en_US
dc.subject	nano-roughening	en_US
dc.subject	NEMS manufacture	en_US
dc.subject	hermetic	en_US
dc.subject	encapsulation	en_US
dc.subject	UV adhesive	en_US
dc.subject	bonding	en_US
dc.title	Nano-roughening for reliable N/MEMS manufacture	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/NEMS.2006.334659	en_US
dc.identifier.journal	2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Vols 1-3	en_US
dc.citation.spage	153	en_US
dc.citation.epage	156	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000248485800035	-
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