Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors

doi:10.1109/RELPHY.2006.251337

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DC Field	Value	Language
dc.contributor.author	Shieh, Ming-Shan	en_US
dc.contributor.author	Chen, Chih-Yang	en_US
dc.contributor.author	Hsu, Yuan-Jiun	en_US
dc.contributor.author	Wang, Shen-De	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.date.accessioned	2014-12-08T15:25:06Z	-
dc.date.available	2014-12-08T15:25:06Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	0-7803-9498-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17480	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2006.251337	en_US
dc.description.abstract	The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH(3) passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH(3) passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit: higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of chemical mechanical polish process on low-temperature poly-SiGe thin-film transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RELPHY.2006.251337	en_US
dc.identifier.journal	2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL	en_US
dc.citation.spage	711	en_US
dc.citation.epage	712	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000240855800152	-
Appears in Collections:	Conferences Paper

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