标题: Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
作者: Huang, SY
Chen, KM
Huang, GW
Yang, DY
Chang, CY
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: RF MOSFETs;model;hot-carrier stress;oxide breakdown;noise figure
公开日期: 2006
摘要: Effects of hot carrier stress (HCS) and oxide breakdown (OBD) on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that under the same dc degradation, the cut-off frequency (f(Tau)) and maximum oscillation frequency (f(max)) suffered mode seriously by OBD than by HCS. Minimum noise figure (NFmin) is one of the main concerns in RF characteristics. NFmin increased dramatically after OBD than that after HCS due to the added gate leakage paths. Those effects can be clarified and explained by using a constructed explained small-signal model.
URI: http://hdl.handle.net/11536/17524
ISBN: 0-7803-9472-0
期刊: 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers
起始页: 81
结束页: 84
显示于类别:Conferences Paper