A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)

標題:	A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
作者:	Kuo, Chien-I Hsu, Heng-Tung Wu, Chien-Ying Chang, Edward Yi Miyamoto, Yasuyuki Chen, Yu-Lin Biswas, Dhrubes 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	InAs-channel;HEMTs;sub-millimeter-wave
公開日期:	2009
摘要:	A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
URI:	http://hdl.handle.net/11536/17560 http://dx.doi.org/10.1109/ICIPRM.2009.5012458
ISBN:	978-1-4244-3432-9
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2009.5012458
期刊:	2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)
起始頁:	128
結束頁:	131
顯示於類別：	Conferences Paper

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