標題: Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
作者: Chin, A
Laio, CC
Chen, C
Chiang, KC
Yu, DS
Yoo, WJ
Samudra, GS
Wang, T
Hsieh, IJ
McAlister, SP
Chi, CC
電機學院
College of Electrical and Computer Engineering
公開日期: 2005
摘要: To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO(3) barrier (kappa=23), and smaller erase current by large Delta E(c) of AILaO(3)/TaN, the SiO(2)/AlGaN/AlLaO(3)/TaN devices show good 85 degrees C memory integrity of low +/- 10V 1ms P/E, large 3.9V initial Delta V(th) and 2.4V extrapolated 10-year retention. A fast 100ps P/E of +/- 11V still gives 3.0V initial Delta V(th) and 1.6V 10-year retention.
URI: http://hdl.handle.net/11536/17578
ISBN: 0-7803-9268-X
期刊: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST
起始頁: 165
結束頁: 168
Appears in Collections:Conferences Paper